Nanowire Devices and Circuits

Dr.Wei Lu

University of Michigan at Ann Arbor
Department of Electrical and Computer Engineering

Wednesday, 14th April 2010
3:00PM Samsung Auditorium

A nanowire is a one-dimensional structure with "diameter" of tens of nanometers and length up to tens of micrometers. In this talk, I will discuss my group's research on several types of devices based on both nano-fabricated nanowires (using the so-called top-down approach) and chemically-grown nanowires (so-called bottom-up approach). Using synthesized SnO2 nanowire arrays, we have fabricated transparent TFT devices on glass with operation frequencies > 100 MHz; Ge/Si core/shell nanowires have be grown epitaxially on Si substrates and can be made into very high-performance transistor devices. Finally, I will discuss my group's efforts to build circuits using crossed wire "crossbar" structures based on two-terminal resistive switches (memristors) which can act as high density memories or synapses in biologically inspired neuromorphic circuits.